Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

GaN transistor reverse conduction voltage (V RC) is dependent on the threshold voltage (V TH) and the OFF-state gate bias (V ...

Infineon introduces first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

Chromium prevents catastrophic device failure by mitigating hotspot shunting, being chemically stable against I 2 formed during reverse bias stress. Article subjects are automatically applied from the ...