Nexperia has announced a range automotive-qualified SiC MOSFETs with RDS (on) values of 30, 40 and 60 mΩ. These devices ...

Nexperia has unveiled a range of highly efficient and robust automotive-qualified silicon carbide (SiC) MOSFETs with RDS(on) values of 30, 40 and 60 mΩ. Automotive-qualified 1200 V SiC MOSFETs Credit: ...

The AEC-Q101-qualified 1200 V SiC MOSFETs in D2PAK-7 packaging combine excellent thermal stability and easy assembly. Nexperia has introduced a new lineup of highly efficient and rugged ...

Navitas Redefines Reliability with Industry’s First Automotive ‘AEC-Plus’ Qualified SiC MOSFETs in HV-T2Pak Top-Side Cooled Package Unprecedented reliability combined with superior ...

Infineon has announced that its OptiMOS 6 80V power MOSFETs in a compact 5x6 mm² dual side cooling (DSC) package have been ...

NoMIS claims significant reductions in on-resistance for its 1.2-kV planar SiC MOSFETs, supporting higher-frequency switching. NoMIS Power Corp. has claimed significant reductions in on-resistance for ...

NAVITAS SEMICONDUCTOR HV-T2PaK 650V and 1200V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2Pak top-side cooled package, delivers high creepage of 6.45mm to meet IEC-compliance ...

The 1.2 kV SiC MOSFETs improve efficiency, performance, and make it easier to upgrade systems without redesigning, boosting power and reducing resistance. NoMIS Power Next Generation 1.2 kV SiC MOSFET ...

In this special Wine Down Friday episode at PCIM, Maurizio Di Paolo Emilio sits down with Peter Wawer, division president of green industrial power at Infineon Technologies, to reflect on his career ...

Toshiba Electronics Europe GmbH has released a gate driver photocoupler ideal for driving SiC MOSFETs in industrial equipment like industrial inverters, UPS, and PV inverters, which experience harsh ...