Building-integrated photovoltaics (PV) fundamentally represents a revolutionary method of building and energy conversion. It incorporates solar technology into the structure of buildings, transforming ...

WeEn Semiconductors has unveiled a pair of 2,000V rectifiers in TO247 packaging, one rated at 90A and the other at 60A. They ...

In this work, we report a bias-selectable broadband and high photography-responsive Si/PbSe heterojunction photodetector fabricated on silicon-on-insulator (SOI) substrate. Specifically, the device ...

In this tutorial, we will study the behavior of a diode reverse-biased by a Dirac pulse, subsequently considering the special (and unpublished) case of a Zener diode.

These characteristics make them ideal for high-speed switching circuits. The high-performance SiC diodes are also notable for their lowest reverse leakage (I R) in the industry, at 20µA (max.). This ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...

GaN transistor reverse conduction voltage (V RC) is dependent on the threshold voltage (V TH) and the OFF-state gate bias (V GS) due to the lack of body diode. Moreover, the V TH of a GaN transistor ...

“GaN transistor reverse conduction voltage is dependent on the threshold voltage and the off-state gate bias. The threshold voltage of a GaN transistor is typically higher than the turn-on voltage of ...

GaN transistor reverse conduction voltage (V RC) is dependent on the threshold voltage (V TH) and the OFF-state gate bias (V GS) due to the lack of body diode. Moreover, the V TH of a GaN transistor ...

In this tutorial, we will study the behavior of a diode reverse-biased by a Dirac pulse, subsequently considering the special (and unpublished) case of a Zener diode. In this tutorial, we will study ...