Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode ...

an ideal diode conducts electricity when a voltage of 0.6V is applied in the forward direction. This means current flows from the anode (positive) to the cathode (negative). Reverse bias ...

GaN transistor reverse conduction voltage (V RC) is dependent on the threshold voltage (V TH) and the OFF-state gate bias (V ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

In every scientific discovery in the movies, a scientist observes something unexpected, scratches the side of his or her ...

Infineon introduces first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.

At last, some 'spare' time this weekend, and I learned two things about SCR dc motor control: Permanent magnet dc motors need ...

Antenna violation...? why reverse biased diode ...? *During semiconductor manufacturing where conductive structures such as metal interconnects act as "antennas" and there is charge accumulation ...

Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

All these above efforts are beneficial to prevent from the premature edge breakdown of the avalanche diode. However, these guard rings are not able to withstand the higher reverse bias voltage. The ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.