Doping limitations, either p-type or n-type, in many compound semiconductors, such as p-type doping in CdTe and GaN, and ...

The GaN cap layer reduces the vertical electric field in the GaN channel, leading to an increase in 2DEG charge density and ... and maximum cut-off frequency. The drain doping concentration ...

(CNN) — British No. 1 Jack Draper says Jannik Sinner doesn’t deserve the “hate he gets” as the Italian nears a return from a doping suspension. Sinner is currently serving a three-month ...

This tool enabled us to simulate real-world conditions and fine-tune key device parameters such as absorber acceptor density, defect density, and layer thickness. Our findings, published in Materials ...

Abstract: The optical transparent metamaterial absorber (MA) still faces challenges such as narrow bandwidth, large thickness, and poor low-frequency absorption. In this work, we proposed an MA ...

This study overcomes these limitations and objectives by introducing MoSe2 as a dual absorber ... optimal layer thickness, controlled defect levels, tailored doping concentrations, and minimized ...