Modern semiconductors facilitate faster switching speeds and lower losses to support designers. A new leadless power package drives down on-state resistance and provides close to “GaN-like” switching ...
Wide band gap (WBG) materials, namely silicon carbide (SiC) and gallium nitride (GaN), have proven that they can deliver multiple benefits to power electronic designs over the incumbent silicon (Si).
Two power design challenges are taking teams into unfamiliar territory. Wide bandgap (WBG) semiconductors target greater efficiency and density. Stricter EMI compliance regulations now come standard ...
Increasingly, applications such as DC/DC converters, power management units (PMU)[1], LED display power[2] and integrated display lighting solutions rely on integrated power MOSFETs (e.g., LDNMOS).
Power integrity for today’s designs requires accurate modeling of voltage variation across die and efficient coupling between chip/package layouts in a unified platform. March 12th, 2015 - By: Chris ...
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