TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the development of 90-nanometer (nm) one-transistor MONOS ...

Santa Clara, Calif., February 18, 2014 — Renesas Electronics Corporation (TSE: 6723), a premier provider of advanced semiconductor solutions, today announced that it has developed the industry's first ...

For nearly 40 years, scientists have speculated that basic electrical circuits have a natural ability to remember things even when the power is switched off. They just couldn't find it. Now ...

Toshiba has developed a new generation of its high speed flash memory to provide zero-wait state performance at 100MHz for its ARM-based embedded microcontrollers. Nano Flash-100 follows on from the ...

Hynix signs on to manufacture the once-theoretical memory resistor developed in HP Labs. The first commercial product will arrive in "three to five years." Erica Ogg is a CNET News reporter who covers ...

Fujitsu Microelectronics today announced the development of new flash memory macro that enables NOR flash memory circuits to achieve high-speed read operations while operating at low power currents.

Those circuits depend on enzymes known as recombinases, which can cut out stretches of DNA, flip them, or insert them. Sequential activation of those enzymes allows the circuits to count events ...